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JANTX2N3811 dual transistorReport evaluates effects of power and temperature overstress on Motorola and National Semiconductor devices. National Semiconductor devices exceeded 50 percent failure after 160 hours at 225 deg C. Motorola suffered more rejects but failures occurred at 300 deg C. Difference in lead bonding technique may explain performance.
Document ID
19800000028
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-25265
Report Number: MFS-25265
ISSN: 0145-319X
Accession Number
80B10028
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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