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Large area silicon sheet by EFGRecent advances toward silicon growth stations and improved electronic quality of multiplesilicon are discussed. These advances were made in large measure by studies in which the composition of the gas environment around the meniscus area was varied. By introducing gases such as CO2, CO, and CH4 into this region, reproducible increases in diffusion length and cell performance were realized, with the best large area (5 cm x 10 cm) cells exceeding 11% efficiency.
Document ID
19800012332
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 4, 2013
Publication Date
March 14, 1980
Subject Category
Energy Production And Conversion
Report/Patent Number
DOE/JPL-954355-79/11
NASA-CR-162907
JPL-9950-313
Report Number: DOE/JPL-954355-79/11
Report Number: NASA-CR-162907
Report Number: JPL-9950-313
Accession Number
80N20816
Funding Number(s)
CONTRACT_GRANT: JPL-954355
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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