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High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic propertiesUsing neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.
Document ID
19800013186
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Lock, K.
(Siemens A.G. Munich, United States)
Patalong, H.
(Siemens A.G. Munich, United States)
Platzoeder, K.
(Siemens A.G. Munich, United States)
Date Acquired
September 4, 2013
Publication Date
October 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-TM-75449
BMFT-FB-T-77-22
Report Number: NASA-TM-75449
Report Number: BMFT-FB-T-77-22
Accession Number
80N21672
Funding Number(s)
CONTRACT_GRANT: NASW-3199
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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