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Coplanar back contacts for thin silicon solar cellsA process for fabricating 2 to 3 mil wraparound solar cells was formulated. Sample thin wraparound cells were fabricated using this process. The process used a reinforced perimeter construction to reduce the breakage that occurs during handling of the wafers. A retracting piston post was designed and fabricated to help minimize the breakage that occurs during the screen printing process. Two alternative methods of applying the aluminum back surface field were investigated. In addition to the standard screen printed back surface field, both spin-on and evaporated aluminum techniques were researched. Neither spin-on nor evaporated aluminum made any noticeable improvement over the screen printing technique. A fine screen mesh was chosen for the application of the aluminum paste back surface field. The optimum time and temperature for firing the aluminum turned out to be thirty seconds at 850 C. The development work on the dielectric included looking at three dielectrics for the wraparound application. Transene 1000, Thick Film Systems 1126RCB and an in house formulation 61-2-2A were all tested. Cells with pre-dielectric thickness of 3.0-0-3.5 mils using Transene 1000 as the wraparound dielectric and the procedure outlined above showed an average efficiency of 10.7 percent. Thinner cells were fabricated, but had an unacceptable yield and efficiency.
Document ID
19800020359
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Thornhill, J. W.
(Spectrolab, Inc. Sylmar, CA, United States)
Sipperly, W. E.
(Spectrolab, Inc. Sylmar, CA, United States)
Date Acquired
September 4, 2013
Publication Date
March 1, 1980
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-159811
Report Number: NASA-CR-159811
Accession Number
80N28860
Funding Number(s)
CONTRACT_GRANT: NAS3-21251
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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