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New PbSnTe heterojunction laser diode structures with improved performanceSeveral recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.
Document ID
19800021154
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fonstad, C. G.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kasemset, D.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Hsieh, H. H.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Rotter, S.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: NASA. Langley Res. Center Heterodyne Systems and Technol., Pt. 1
Subject Category
Lasers And Masers
Accession Number
80N29655
Funding Number(s)
CONTRACT_GRANT: NSG-1413
CONTRACT_GRANT: NSF DMR-76-80895
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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