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Thin n-i-p radiation-resistant solar cell feasibility studySilicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.
Document ID
19800021351
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Allison, J. F.
(Communications Satellite Corp. Clarksburg, MD, United States)
Arndt, R. A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Meulenberg, A., Jr.
(Communications Satellite Corp. Clarksburg, MD, United States)
Date Acquired
September 4, 2013
Publication Date
June 1, 1980
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-159871
Report Number: NASA-CR-159871
Accession Number
80N29852
Funding Number(s)
CONTRACT_GRANT: NAS3-21280
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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