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Ku-band field-effect power transistorsA single stage amplifier was developed using an 8 gate, 1200 micrometer width device to give a gain of 3.3 + or - 0.1 dB over the 14.4 to 15.4 GHz band with an output power of 0.48 W and 15% minimum efficiency with 0.255 W of input power. With two 8 gate devices combined and matched on the device carrier, using a lumped element format, a gain of 3 dB was attained over the 14.5 to 15.5 GHz band with a maximum efficiency of 9.9% for an output power of 0.8 W.
Document ID
19800023225
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Taylor, G. C.
(RCA Labs. Princeton, NJ, United States)
Huang, H. C.
(RCA Labs. Princeton, NJ, United States)
Date Acquired
September 4, 2013
Publication Date
September 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
PRRL-79-CR-39
NASA-CR-160010
Report Number: PRRL-79-CR-39
Report Number: NASA-CR-160010
Accession Number
80N31732
Funding Number(s)
CONTRACT_GRANT: NAS5-24355
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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