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A fully monolithic InSb infrared CCD arrayFully monolithic infrared CCD arrays fabricated in InSb are described. The process used in fabrication includes planar junction formation by ion implantation, and an aluminum and SiO2 overlapping CCD gate structure which makes use of conventional chemical and plasma etching. IR detection and readout is demonstrated with the arrays.
Document ID
19800044155
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Thom, R. D. (Santa Barbara Research Center Goleta, CA, United States)
Koch, T. L. (Santa Barbara Research Center Goleta, CA, United States)
Langan, J. D. (Santa Barbara Research Center Goleta, CA, United States)
Parrish, W. J. (Santa Barbara Research Center Goleta, Calif., United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1980
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-27
Subject Category
Instrumentation And Photography
Accession Number
80A28325
Funding Number(s)
CONTRACT_GRANT: NAS1-15551
Distribution Limits
Public
Copyright
Other

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