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Heat-Exchanger Method of Crystal GrowthLarge crystals of silicon are grown from melt, in either vacuum or pressurized atmosphere, without moving crucible, furnace, or anything else. Seed crystal is mounted on helium-cooled heat exchanger, which prevents seed from melting when furnace melts rest of silicon material in crucible; heat exchanger draws off heat from melt so that a solid ingot grows outward from seed in a regular crystal structure. Bottom of crucible is insulated so that heat exchanger cools only seed.
Document ID
19810000090
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Khattak, C. P.
(Crystal Systems, Inc.)
Schmid, F.
(Crystal Systems, Inc.)
Date Acquired
August 11, 2013
Publication Date
September 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14819
ISSN: 0145-319X
Report Number: NPO-14819
Accession Number
81B10090
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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