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K-band high power latching switchA 19 GHz waveguide latching switch with a bandwidth of 1400 MHz and an exceptionally low insertion loss of 0.25 dB was demonstrated. The RF and driver ferrites are separate structures and can be optimized individually. This analysis for each structure is separately detailed. Basically, the RF section features a dual turnstile junction. The circulator consists of a dielectric tube which contains two ferrite rods, and a dielectric spacer separating the ferrite parts along the center of symmetry of the waveguide to form two turnstiles. This subassembly is indexed and locked in the center of symmetry of a uniform junction of three waveguides by the metallic transformers installed in the top and bottom walls of the housing. The switching junction and its actuating circuitry met all RF performance objectives and all shock and vibration requirements with no physical damage or performance degradation. It exceeds thermal requirements by operating over a 100 C temperature range (-44 C to +56 C) and has a high power handling capability allowing up to 100 W of CW input power.
Document ID
19810007873
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Mlinar, M. J.
(TRW Systems Group Redondo Beach, CA, United States)
Piotrowski, W. S.
(TRW Systems Group Redondo Beach, CA, United States)
Raue, J. E.
(TRW Systems Group Redondo Beach, CA, United States)
Date Acquired
September 4, 2013
Publication Date
December 19, 1980
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
REPT-34037
NASA-CR-165159
Report Number: REPT-34037
Report Number: NASA-CR-165159
Accession Number
81N16389
Funding Number(s)
CONTRACT_GRANT: NAS3-21761
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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