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Large area silicon sheet by EFGThe development of a technique for the production of silicon ribbon is discussed. Extensive characterization of the multiple ribbon Furnace 3A main zone temperature profile was performed and the information used to improve uniformity of heating. Irregularities in the main zone heater were associated with growth difficulties at specific cartridge locations, and growth conditions subsequently improved by profiling the main zone heater. Good growth conditions were established in all three cartridge positions. These improvements allowed multiple growth of three 10 cm wide ribbons to be demonstrated for periods of an hour on several occasions. A gas distribution system for the 10 cm cartridge was introduced and demonstrated to lead to improved ambient control during growth. Growth without and with CO2 showed that quality improvement in 10 cm ribbon grown with cold shoes results from ambient manipulation.
Document ID
19810013015
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 4, 2013
Publication Date
February 17, 1981
Subject Category
Energy Production And Conversion
Report/Patent Number
DOE/JPL-954355-80/16
JPL-9950-513
NASA-CR-164138
QR-4
Report Number: DOE/JPL-954355-80/16
Report Number: JPL-9950-513
Report Number: NASA-CR-164138
Report Number: QR-4
Accession Number
81N21544
Funding Number(s)
CONTRACT_GRANT: JPL-954355
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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