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Method for horizontally growing ribbon crystalA high speed method for forming ribbon crystal of desired width and thickness is characterized by drawing out the ribbon through a space whose distance is 5.7 times that of the thickness of the grown ribbon. The ribbon is drawn out between the molten body of the lower surface and the tip of the upper surface of the seed crystal and growing crystal. The ribbon growing at the tip of the seed crystal is drawn out horizontally and centrifugally by controlling the amount of cooling and heating. The temperature is maintained about equal to the upper surface of the outlets from which the molten substance is drawn, at least in certain portions of the crucible rim, the rim is elevated to prevent dropping of the molten raw material.
Document ID
19810014418
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Kudo, B.
(NASA Headquarters Washington, DC United States)
Date Acquired
September 4, 2013
Publication Date
June 1, 1980
Subject Category
Solid-State Physics
Report/Patent Number
NASA-TM-75809
Report Number: NASA-TM-75809
Accession Number
81N22951
Funding Number(s)
CONTRACT_GRANT: NASW-3199
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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