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Defect chemistry and characterization Hg(1-x)Cd(x)TeIodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.
Document ID
19810015390
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Vydyanath, H. R.
(Honeywell Electro-Optics Center Lexington, MA, United States)
Donovan, J. C.
(Honeywell Electro-Optics Center Lexington, MA, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1981
Subject Category
Solid-State Physics
Report/Patent Number
REPT-8103-01
NASA-CR-161755
Report Number: REPT-8103-01
Report Number: NASA-CR-161755
Accession Number
81N23925
Funding Number(s)
CONTRACT_GRANT: NAS8-33245
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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