High sensitivity operation of discrete solid state detectors at 4 K

Techniques are described to allow operation of discrete, solid state detectors at 4 K with optimized JFET amplifiers. Three detector types cover the 0.6 to 4 mm spectral range with NEP approximately equal to 10 to the 16th power Hz (-1/2) for two of the types and potential improvement to this performance for the third. Lower NEP's are anticipated at longer infrared wavelengths.