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Total-dose radiation effects data for semiconductor devices, volume 1Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.
Document ID
19810021817
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Price, W. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Martin, K. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nichols, D. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gauthier, M. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Brown, S. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 4, 2013
Publication Date
August 1, 1981
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
JPL-PUB-81-66-VOL-1
NASA-CR-164707
Report Number: JPL-PUB-81-66-VOL-1
Report Number: NASA-CR-164707
Accession Number
81N30356
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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