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The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbookThe fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.
Document ID
19810023842
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Bouldin, D. L. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Eastes, R. W. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Feltner, W. R. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Hollis, B. R. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Routh, D. E. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
September 4, 2013
Publication Date
September 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
M-262
NASA-TM-78188
Report Number: M-262
Report Number: NASA-TM-78188
Accession Number
81N32385
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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