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A study of single event upsets in static RAM'sSeveral types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
Document ID
19810035501
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Price, W. E. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nichols, D. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Soliman, K. A. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1980
Subject Category
Electronics And Electrical Engineering
Accession Number
81A19905
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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