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Gettering Silicon Wafers with PhosphorusSilicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.
Document ID
19820000218
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Daiello, R. V. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
March 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15357
ISSN: 0145-319X
Report Number: NPO-15357
Accession Number
82B10218
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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