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Tests on Double Layer Metalization28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.
Document ID
19820000239
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Woo, D. S. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
March 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-25688
ISSN: 0145-319X
Report Number: MFS-25688
Accession Number
82B10239
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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