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Chemical Vapor Deposition of Germanium of SiliconExperimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.
Document ID
19820000348
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Aharoni, H. (CALTECH)
Date Acquired
August 10, 2013
Publication Date
May 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15565
ISSN: 0145-319X
Report Number: NPO-15565
Accession Number
82B10348
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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