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Growing Silicon Ribbon HorizontallySolid ribbon of silicon pulled horizontally over lip of crucible. As heat leaves silicon by radiation, conduction, and convections, surface layer solidifies from liquid. Horizontal growth of ribbon offers several advantages over vertical growth. It is faster--possibly 1 to 2 centimeters per second-and is done without using drawing dies, source of contamination in vertical growth.
Document ID
19820000352
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, J. A.
(CALTECH)
Date Acquired
August 10, 2013
Publication Date
May 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14977
Report Number: NPO-14977
ISSN: 0145-319X
Accession Number
82B10352
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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