NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Silicon carbide as an oxidation-resistant high-temperature material. 1: Oxidation and heat corrosion behaviorThe oxidation and corrosion behavior of SiC (in the form of a SiC powder) and hot-pressed and reaction-bound material were studied. The excellent stability of SiC in an oxidizing atmosphere is due to the development of protective SiO2 coatings. Any changes in these protective layers (e.g., due to impurities, reaction with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of SiC application.
Document ID
19820003247
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Schlichting, J.
(NASA Headquarters Washington, DC United States)
Date Acquired
September 4, 2013
Publication Date
August 1, 1981
Subject Category
Composite Materials
Report/Patent Number
NASA-TM-76608
Report Number: NASA-TM-76608
Accession Number
82N11120
Funding Number(s)
CONTRACT_GRANT: NASW-3199
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available