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Chemical modification of semiconductor surfacesResults of research on the chemical modification of TiO2 powders in the gas phase and the examination of the modified powders by infrared absorption spectroscopy are comprehensively summarized. The range of information obtainable by IR spectroscopy of chemically modified semiconductors, and a definition of the optimum reaction conditions for synthesizing a monolayer of methylsilanes using vapor phase reaction conditions were considered.
Document ID
19820007267
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Finklea, H. O. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Date Acquired
September 4, 2013
Publication Date
November 30, 1981
Subject Category
Inorganic And Physical Chemistry
Report/Patent Number
NASA-CR-165066
Report Number: NASA-CR-165066
Accession Number
82N15140
Funding Number(s)
CONTRACT_GRANT: NAG1-89
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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