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CO2 laser waveguiding in proton implanted GaAsSurface layers capable of supporting optical modes at 10.6 microns have been produced in n-type GaAs wafers through 300 keV proton implantation. The dominant mechanism for this effect appears to be free carrier compensation. Characterization of the implanted layers by analysis of infrared reflectivity spectra and synchronous coupling at 10.6 microns produced results in good agreement with elementary models. These results of sample characterization by infrared reflectivity and by CO2 laser waveguiding as implanted are presented and evaluated.
Document ID
19820008039
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jenkinson, H. A. (Army Armament Research and Development Command Dover, NJ, United States)
Larson, D. C. (Drexel Univ.)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Publication Information
Publication: NASA. Langley Research Center Opt. Inform. Process. for Aerospace Appl.
Subject Category
Optics
Accession Number
82N15912
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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