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Development of a polysilicon process based on chemical vapor deposition (phase 1)A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.
Document ID
19820008614
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Mccormick, J.
(Hemlock Semiconductor Corp. MI, United States)
Arvidson, A.
(Hemlock Semiconductor Corp. MI, United States)
Sawyer, D.
(Hemlock Semiconductor Corp. MI, United States)
Plahutnik, F.
(Hemlock Semiconductor Corp. MI, United States)
Date Acquired
September 4, 2013
Publication Date
June 1, 1981
Subject Category
Energy Production And Conversion
Report/Patent Number
JPL-9950-618
NASA-CR-163475
QPR-6
DOE/JPL-955533-81/6
Report Number: JPL-9950-618
Report Number: NASA-CR-163475
Report Number: QPR-6
Report Number: DOE/JPL-955533-81/6
Accession Number
82N16488
Funding Number(s)
CONTRACT_GRANT: JPL-955533
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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