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Low-background performance of a monolithic InSb CCD arrayA 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.
Document ID
19820011243
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Bregman, J. D.
(NASA Ames Research Center Moffett Field, CA, United States)
Goebel, J. H.
(NASA Ames Research Center Moffett Field, CA, United States)
Mccreight, C. R.
(NASA Ames Research Center Moffett Field, CA, United States)
Matsumoto, T.
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Astronomy
Report/Patent Number
NASA-TM-84216
A-8831
Report Number: NASA-TM-84216
Report Number: A-8831
Accession Number
82N19117
Funding Number(s)
PROJECT: RTOP 506-61-51
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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