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High density circuit technologyAcquisition of polyimide materials for inter-metal dielectrics was obtained from three vendors, with considerable evaluation conducted on the Dupont PI2550 material. Experimental results indicate this material can be patterned using contact printing to line width far below 0.1 mils. Optimum line width is acquired using plasma etch equipment. Metal lift-off experiments on thermal evaporated films were optimized for application to sputtered deposited films. Alternate metal-lift-off experiments are proposed for future investigation. Dry processing equipment studies and future trends in VLSI fabrication techniques are on-going.
Document ID
19820012525
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Wade, T. E.
(Mississippi State Univ. Mississippi State, MS, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1980
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161385
NAS 1.26:161385
MSU-EE-QUAR-1-80
Report Number: NASA-CR-161385
Report Number: NAS 1.26:161385
Report Number: MSU-EE-QUAR-1-80
Accession Number
82N20399
Funding Number(s)
CONTRACT_GRANT: NAS8-33448
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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