Enhanced annealing of GaAs solar cell radiation damageSolar cells are degraded by radiation damage in space. Investigations have been conducted concerning possibilities for annealing this radiation damage in GaAs solar cells, taking into account the conditions favoring such annealing. It has been found that continuous annealing as well as the combination of injection annealing with thermal annealing can lead to recovery from radiation damage under particularly favorable conditions in GaAs solar cells. The damage caused by both electrons and protons in GaAs solar cells can be substantially reduced by annealing at temperatures as low as 150 C, under appropriate conditions. This possibility makes the GaAs solar cells especially attractive for long space missions, or for missions in severe radiation environments. Attention is given to results concerning periodic thermal annealing, continuous annealing, and injection annealing combined with thermal annealing.
Document ID
19820061399
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Loo, R. (Hughes Research Labs. Malibu, CA, United States)
Knechtli, R. C. (Hughes Research Labs. Malibu, CA, United States)
Kamath, G. S. (Hughes Research Laboratories Malibu, CA, United States)