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Advances in high output voltage silicon solar cellsSolar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.
Document ID
19820061407
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Arndt, R. A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Meulenberg, A.
(Communications Satellite Corp. Clarksburg, MD, United States)
Allison, J. F.
(COMSAT Laboratories Clarksburg, MD, United States)
Weizer, V. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 12, 1981
End Date: May 15, 1981
Accession Number
82A44942
Funding Number(s)
CONTRACT_GRANT: NAS3-21227
Distribution Limits
Public
Copyright
Other

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