Advances in high output voltage silicon solar cellsSolar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.
Document ID
19820061407
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Arndt, R. A. (Communications Satellite Corp. Clarksburg, MD, United States)
Meulenberg, A. (Communications Satellite Corp. Clarksburg, MD, United States)
Allison, J. F. (COMSAT Laboratories Clarksburg, MD, United States)
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)