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Ti/Pd/Cu Contacts for Semiconductor DevicesCopper systems equivalent in performance to silver or gold systems. Titanium layer and palladium layer deposited on semiconductor device by electron beam evaporation. Desired pattern etched using photoresist. Thin layer of copper plated on contact pattern from cyanide solution. Copper layer then built up to 4 to 8 microns by electroplatng from acid solution.
Document ID
19830000268
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Campbell, R. B. (Westinghouse Electric Corp.)
Rohatgi, A. (Westinghouse Electric Corp.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-15043
ISSN: 0145-319X
Report Number: NPO-15043
Accession Number
83B10268
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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