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Improved High-Current Drive CircuitUses VMOS field-effect power transistor. High-current drive circuit employs n-channel enhancement-mode VMOS field-effect power transistor to eliminate problem of oscillation at high power encountered in conventional circuits with bipolar transistors. Drive voltage required is typically 1 to 3 V for load current of 10 A.
Document ID
19830000269
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cole, S. W. (CALTECH)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-14938
ISSN: 0145-319X
Report Number: NPO-14938
Accession Number
83B10269
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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