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Improved Silicon-Growth ChamberSilicon-growth technique, based on coating ceramic substrates with thin layer of molten silicon solidifies to form polycrystalline film, modified to produce solar-cell quality silicon sheet.
Document ID
19830000471
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Heaps, J. D. (Honeywell, Inc.)
Zook, J. D. (Honeywell, Inc.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15237
ISSN: 0145-319X
Report Number: NPO-15237
Accession Number
83B10471
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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