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Shield Boosts Silicon-Growth RateRadiation shield permits faster growth--by 20 percent--of singlecrystal silicon from molten silicon by producting sharper thermal gradients near growth front.
Document ID
19830000475
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lane, R. L.
(Kayex Corp.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-16049
Report Number: NPO-16049
ISSN: 0145-319X
Accession Number
83B10475
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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