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Infrared-Responsive Monolithic MOS CircuitLead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.
Document ID
19830000497
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Jhabvala, Muzban D.
Dargo, David R.
Lyons, John C.
Date Acquired
August 11, 2013
Publication Date
November 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
ISSN: 0145-319X
Report Number: GSC-12782
GSC-12782
Accession Number
83B10497
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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