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Low-Noise Submillimeter-Wave DiodeLow noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.
Document ID
19830000498
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Mattauch, R. J. (University of Virginia)
Date Acquired
August 11, 2013
Publication Date
November 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
Report Number: NPO-15935
ISSN: 0145-319X
NPO-15935
Accession Number
83B10498
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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