NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Purifying Silicon During Crystal GrowthDirect current applied to molten silicon during crystallization causes impurities to migrate away from interface of growing crystal. Method improves purity of crystal without interfering with growth process or requiring additional operator attention.
Document ID
19830000730
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Shlichta, P. J. (CALTECH)
Date Acquired
August 11, 2013
Publication Date
December 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14831
Report Number: NPO-14831
ISSN: 0145-319X
Accession Number
83B10730
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available