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Development of a polysilicon process based on chemical vapor deposition, phase 1The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU).
Document ID
19830006402
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Plahutnik, F.
(Hemlock Semiconductor Corp. MI, United States)
Arvidson, A.
(Hemlock Semiconductor Corp. MI, United States)
Sawyer, D.
(Hemlock Semiconductor Corp. MI, United States)
Date Acquired
September 4, 2013
Publication Date
May 5, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.26:169633
QPR-7
NASA-CR-169633
DOE/JPL-955533-81/7
Report Number: NAS 1.26:169633
Report Number: QPR-7
Report Number: NASA-CR-169633
Report Number: DOE/JPL-955533-81/7
Accession Number
83N14673
Funding Number(s)
CONTRACT_GRANT: JPL-955533
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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