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Controlled in situ etch-backA controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.
Document ID
19830012518
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Mattauch, R. J. (JPL California Inst. of Tech., Pasadena, United States)
Seabaugh, A. C. (JPL California Inst. of Tech., Pasadena, United States)
Date Acquired
September 4, 2013
Publication Date
November 20, 1981
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-325933
Patent Number: US-PATENT-4,373,989
Patent Number: NASA-CASE-NPO-15625-1
Accession Number
83N20789
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,373,989|NASA-CASE-NPO-15625-1
Patent Application
US-PATENT-APPL-SN-325933

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