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Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applicationsCommercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.
Document ID
19830016762
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Khattak, C. P. (Crystal Systems, Inc. Salem, MA, United States)
Schmid, F. (Crystal Systems, Inc. Salem, MA, United States)
Hunt, L. P. (Dow Corning Corp. Hemlock, Mich., United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Publication Information
Publication: Silicon Ingot Casting, Phase 3 and Phase 4
Subject Category
Energy Production And Conversion
Accession Number
83N25033
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19830016756Collected WorksSilicon ingot casting: Heat Exchange Method (HEM). Multi-wire slicing: Fixed Abrasive Slicing Technique (FAST). Phase 3 and phase 4: Silicon sheet growth development for the large area sheet task of the low-cost solar array project
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