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Process research on non-CZ silicon materialHigh risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.
Document ID
19830019110
Document Type
Contractor Report (CR)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
ENERGY PRODUCTION AND CONVERSION
Report/Patent Number
DE82-022490
QR-2
NASA-CR-172684
NAS 1.26:172684
DOE/JPL-955909-82/8
Funding Number(s)
CONTRACT_GRANT: JPL-955909
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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