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High stability amplifierAn electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.
Document ID
19830025920
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Adams, W. A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Reinhardt, V. S.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
September 4, 2013
Publication Date
August 30, 1983
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-PATENT-4,401,953
Patent Number: NASA-CASE-GSC-12646-1
Patent Application Number: US-PATENT-APPL-SN-284290
Accession Number
83N34191
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,401,953|NASA-CASE-GSC-12646-1
Patent Application
US-PATENT-APPL-SN-284290
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