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Photovoltaic module bypass diode encapsulationThe design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.
Document ID
19830027230
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Shepard, N. J., Jr.
(General Electric Co. Philadelphia, PA, United States)
Date Acquired
September 4, 2013
Publication Date
June 20, 1983
Subject Category
Energy Production And Conversion
Report/Patent Number
DOE/JPL-956254/1
NASA-CR-173110
DRD-MA-8
NAS 1.26:173110
DRL-176
Report Number: DOE/JPL-956254/1
Report Number: NASA-CR-173110
Report Number: DRD-MA-8
Report Number: NAS 1.26:173110
Report Number: DRL-176
Accession Number
83N35501
Funding Number(s)
CONTRACT_GRANT: JPL-956254
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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