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Planar multijunction high voltage solar cell chipA new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.
Document ID
19830032705
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Valco, G. J.
(Case Western Reserve Univ. Cleveland, OH, United States)
Kapoor, V. J.
(Case Western Reserve University Cleveland, OH, United States)
Evans, J. C., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 11, 2013
Publication Date
November 1, 1982
Publication Information
Publication: Journal of Applied Physics
Volume: 53
Subject Category
Energy Production And Conversion
Accession Number
83A13923
Distribution Limits
Public
Copyright
Other

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