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Residual double acceptors in bulk GaAsBy using infrared absorption, photoluminescence, and Hall measurements we have observed an additional level associated with a residual acceptor in liquid encapsulated Czochralski GaAs. These results indicate that the defect is a double acceptor with levels 78 and 200 meV above the valence band.
Document ID
19830038771
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.93913
Authors
Elliott, K. R. (Rockwell International Microelectronics Research and Development Center Thousand Oaks, CA, United States)
Date Acquired
August 11, 2013
Publication Date
February 1, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 42
Subject Category
Solid-State Physics
Accession Number
83A19989
Funding Number(s)
CONTRACT_GRANT: NAS3-22224
CONTRACT_GRANT: NAS3-22235
Distribution Limits
Public
Copyright
Other

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