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An enhanced sensitivity null ellipsometry technique for studying films on substrates - Application to silicon nitride on gallium arsenide
Document ID
19830056400
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.332137
Authors
Alterovitz, S. A. (Nebraska Univ. Lincoln, NE, United States)
Bu-Abbud, G. H. (Nebraska Univ. Lincoln, NE, United States)
Woollam, J. A. (Nebraska, University Lincoln, NE, United States)
Liu, D. C. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
ISSN: 0021-8979
Subject Category
Solid-State Physics
Report/Patent Number
ISSN: 0021-8979
Accession Number
83A37618
Funding Number(s)
CONTRACT_GRANT: NAG3-154
CONTRACT_GRANT: F33601-81-MJ869
Distribution Limits
Public
Copyright
Other

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