Interfacial chemistry of electrical contacts on GaAs and Al0.3Ga0.7As

Thermal restructuring of oxides of GaAs and Al0.3Ga0.7As substrates has been studied using Auger electron spectroscopy and both neutral and secondary ion mass spectrometry. The oxide underwent restructuring at temperature of at least 250 C while gallium oxides desorbed at temperatures depending upon the type of oxide. Reoxidation at low oxygen pressures resulted in surface oxygen species different from those in native oxides. These species desorbed at about 520 C while native oxides desorbed at 600 C. Carbon-containing contaminants did not desorb. The implications of these results for electrical contacts are discussed.