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High-Mobility Epitaxial Silicon WafersNew technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
Document ID
19840000175
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Stermer, R. L., Jr (Rockwell International Corp.)
Fripp, A. L., Jr. (Rockwell International Corp.)
Jones, A. (Rockwell International Corp.)
Mcmullen, J. (Rockwell International Corp.)
Manasevit, H. (Rockwell International Corp.)
Gergis, I.
Soclof, S.
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 3
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-12846
ISSN: 0145-319X
Report Number: LAR-12846
Accession Number
84B10175
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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