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Surface acoustic wave/silicon monolithic sensor/processorA new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.
Document ID
19840002298
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Kowel, S. T.
(Syracuse Univ. NY, United States)
Kornreich, P. G.
(Syracuse Univ. NY, United States)
Nouhi, A.
(Syracuse Univ. NY, United States)
Kilmer, R.
(Syracuse Univ. NY, United States)
Fathimulla, M. A.
(Syracuse Univ. NY, United States)
Mehter, E.
(Syracuse Univ. NY, United States)
Date Acquired
September 4, 2013
Publication Date
September 1, 1983
Subject Category
Engineering (General)
Report/Patent Number
TR-83-18
NASA-CR-174541
NAS 1.26:174541
Report Number: TR-83-18
Report Number: NASA-CR-174541
Report Number: NAS 1.26:174541
Accession Number
84N10366
Funding Number(s)
CONTRACT_GRANT: NSG-1611
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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