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High efficiency, low cost thin GaAs solar cellsThe feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.
Document ID
19840002594
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Fan, J. C. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
September 4, 2013
Publication Date
September 30, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.26:168265
NASA-CR-168265
Report Number: NAS 1.26:168265
Report Number: NASA-CR-168265
Accession Number
84N10662
Funding Number(s)
CONTRACT_GRANT: NAS-C-60878-D
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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