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A 20-GHz IMPATT transmitter, summaryA three stage IMPATT diode amplifier capable of a 16 W CW output and a 2 dB bandwidth of 117 MHz was developed. On the component side, high performance circulators with a 0.2 dB insertion loss and bandwidth of 5 GHz were fabricated. State of the art GaAs IMPATT diodes incorporating diamond heat sink and double Read doping profile were also developed. The diodes are capable of a 2.5 W CW output. A few diodes achieved power outputs as high as 3 W. On the circuit side, high gain (up to 12 dB per stage) single diode, multituned circuits capable of 2 GHz and 930 MHx bandwidth were developed as the first and second stages, respectively, of the amplifier. A 12 diode waveguide cavity combiner was developed as the output stage. The output stage utilized commercially available single drift GaAs IMPATT diodes.
Document ID
19840003318
Acquisition Source
Legacy CDMS
Document Type
Other
Date Acquired
August 12, 2013
Publication Date
June 1, 1983
Publication Information
Publication: A 20-GHz IMPATT Tansmitter 1
Subject Category
Electronics And Electrical Engineering
Accession Number
84N11386
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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